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| Ordering number : ENA0462 2SA2196 / 2SC6101 SANYO Semiconductors DATA SHEET 2SA2196 / 2SC6101 Applications * PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features * * * * * Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2196 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings (--30)40 (--)30 (-)6 (-)5 (-)7 (-)600 1 8 150 --55 to +150 Unit V V V A A mA W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max (--)0.1 (--)0.1 200 (380)450 (25)20 560 MHz pF Unit A A Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0406EA MS IM TC-00000206 No. A0462-1/5 2SA2196 / 2SC6101 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)1.5A, IB=(--)30mA IC=(--)1.5A, IB=(--)75mA VCE=(--)1.5V, IB=(--)30mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= IE=(-)10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--30)40 (--)30 (--)6 (50)30 (270)300 (25)15 Ratings min typ (--170)135 (--)120 (--)0.85 max (--255)200 (--)180 (--)1.2 Unit mV mV V V V V ns ns ns Package Dimensions unit : mm (typ) 7515-002 8.0 3.0 4.0 2.7 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR RB + 470F VCC=12V 24 + 1.5 7.0 11.0 50 100F 1.6 0.8 0.8 0.6 3.0 VBE= --5V 0.5 15.5 20IB1= --20IB2=IC=500mA For PNP, the polarity is reversed. 1 2 3 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 2.4 4.8 --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 IC -- VCE 2SA2196 5.0 IC -- VCE 2SC6101 50m A Collector Current, IC -- A Collector Current, IC -- A A --50m --40mA --30mA --25mA --20mA --15mA 4.5 4.0 3.5 3.0 2.5 2.0 40mA 30mA 25mA 20mA 15mA 10mA --10mA --5mA 5mA 1.5 1.0 0.5 IB=0mA --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IB=0mA 1.6 1.8 2.0 Collector-to-Emitter Voltage, VCE -- V IT11473 Collector-to-Emitter Voltage, VCE -- V IT11474 No. A0462-2/5 2SA2196 / 2SC6101 --5.0 --4.5 IC -- VBE 2SA2196 VCE= --2V Collector Current, IC -- A 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 IC -- VBE 2SC6101 VCE=2V Collector Current, IC -- A --4.0 --3.5 --3.0 --2.5 --2.0 Ta=7 5 --1.0 --0.5 0 0 --0.2 --0.4 --0.6 25C --25C --1.5 --0.8 --1.0 --1.2 IT11284 1000 0 0.2 0.4 0.6 Ta=7 5C 25C --25C 0.8 1.0 C 1.2 IT11291 Base-to-Emitter Voltage, VBE -- V 1000 7 5 Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SA2196 VCE= --2V DC Current Gain, hFE hFE -- IC 2SC6101 VCE=2V 7 5 DC Current Gain, hFE Ta=75C 25C Ta=75C 25C 3 3 --25C 2 --25C 2 100 7 5 --0.01 100 7 5 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 100 5 7 --10 IT11285 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB Collector Current, IC -- A 100 5 7 10 IT11292 Cob -- VCB 2SA2196 f=1MHz Output Capacitance, Cob -- pF 2SC6101 f=1MHz Output Capacitance, Cob -- pF 7 7 5 5 3 3 2 2 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 1000 IT11286 1000 f T -- IC Collector-to-Base Voltage, VCB -- V IT11293 f T -- IC Gain-Bandwidth Product, f T -- MHz 5 Gain-Bandwidth Product, f T -- MHz 7 2SA2196 VCE= --2V 7 5 2SC6101 VCE=2V 3 2 3 2 100 7 5 3 --0.01 100 7 5 3 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT11287 Collector Current, IC -- A IT11294 No. A0462-3/5 2SA2196 / 2SC6101 7 5 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA2196 IC / IB=20 7 5 3 2 VCE(sat) -- IC 2SC6101 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 7 5 3 2 = Ta C 75 0.1 7 5 3 2 = Ta C 75 5C --2 25 C 5 --2 C 25 C --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC -- A 3 2 IT11288 1.0 7 VCE(sat) -- IC Collector Current, IC -- A IT11295 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 3 2 --0.1 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA2196 IC / IB=50 5 3 2 2SC6101 IC / IB=50 C 25 C 75 Ta= C 25 7 Ta= 5C 0.1 7 5 3 2 C --25 C --25 --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC -- A 3 IT11289 3 VBE(sat) -- IC Collector Current, IC -- A IT11296 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 25C --1.0 7 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2SA2196 IC / IB=50 2 2SC6017 IC / IB=50 25C 1.0 7 5 Ta= --25C Ta= --25C 75C 75C 3 2 --0.1 3 2 0.1 2 3 5 7 --1.0 2 3 5 7 2 3 5 7 1.0 2 3 5 7 Collector Current, IC -- A 2 10 7 5 IT11290 1.2 ASO Collector Current, IC -- A IT11297 PC -- Ta ICP=7A IC=5A 100ms DC 1m s 2SA2196 / 2SC6101 3 2 1.0 7 5 3 2 0.1 7 5 3 2 op era 10 tio ms Collector Dissipation, PC -- W 1.0 10 0 Collector Current, IC -- A s s 0 50 0.8 DC op n( Tc = era 25 tio C No 0.6 he ) at n( sin Ta = k 0.01 0.1 2SA2196 / 2SC6101 Tc=25C Single pulse For PNP, the minus sign is omitted. 2 3 5 7 1.0 2 3 25 C ) 0.4 0.2 0 7 10 2 3 5 0 20 40 60 80 100 120 140 160 IT11475 5 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C IT11476 No. A0462-4/5 2SA2196 / 2SC6101 9 8 PC -- Tc 2SA2196 / 2SC6101 Collector Dissipation, PC -- W 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT11477 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0462-5/5 |
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